all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 9 rev. 03.4, 2016-06-22 ptfc210202fc thermally-enhanced high power rf ldmos fet 28 w, 28 v, 1800 C 2200 mhz description the ptfc210202fc integrates two independent 10-watt ldmos fets and is designed for use in cellular amplifer applications in the 2110 to 2170 mhz frequency band. manufactured with infneon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. ptfc210202fc package h-37248-4 features ? input matched ? typical cw performance, 2170 mhz, 28 v, combined outputs - output power at p 1db = 28 w - effciency = 62% - gain = 20.9 db ? capable of handling 10:1 vswr @28 v, 28 w (cw) output power ? integrated esd protection : human body model, class 1c (per jesd22-a114) ? low thermal resistance ? pb-free and rohs compliant rf characteristics single-carrier wcdma specifcations (tested in infneon test fxture) v dd = 28 v, i dq = 170 ma, p out = 5 w avg, ? 1 = 2160 mhz, ? 2 = 2170 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 8 db @ 0.01% ccdf characteristic symbol min typ max unit linear gain g ps 20 21 db drain effciency h d 26.5 29 % adjacent channel power ratio acpr C31 C28 dbc - 60 - 40 - 20 0 20 40 60 0 4 8 12 16 20 24 28 32 36 40 44 efficiency (%) peak/average ratio, gain (db) average output power (dbm) single - carrier wcdma drive - up v dd = 28 v, i dq = 170 ma, ? = 2170 mhz 3gpp wcdma signal, par = 7.5 db, 3.84 mhz bw gain efficiency par @ 0.01% ccdf ptfc210202fc_g1
data sheet 2 of 9 rev. 03.4, 2016-06-22 ptfc210202fc dc characteristics (each side) characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v( br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 0.1 a v ds = 63 v, v gs = 0 v i dss 1.0 a gate leakage current v gs = 10 v, v ds = 0 v i gss 1 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.05 w operating gate voltage v ds = 28 v, i dq = 0.17 v gs 2.40 2.70 3.05 v maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C6 to +10 v operating voltage v dd 0 to +32 v junction temperature t j 225 c storage temperature range t stg C65 to +150 c thermal resistanc e (t case = 70c, 25 w cw) r qjc 2.2 c/w ordering information type and version order code package description shipping ptfc210202fc v1 r0 ptfc210202fcv1r0xtma1 h-37248-4, earless fange tape & reel, 50 pcs ptfc210202fc v1 r250 PTFC210202FCV1R250xtma1 h-37248-4, earless fange tape & reel, 250 pcs
ptfc210202fc data sheet 3 of 9 rev. 03.4, 2016-06-22 typical performance (data taken in a production test fxture) 10 20 30 40 50 60 - 60 - 50 - 40 - 30 - 20 - 10 28 32 36 40 44 drain efficiency(%) acp up & low (dbc) average output power (dbm) single - carrier wcdma 3gpp drive - up v dd = 28 v, i dq = 170 ma, 3gpp wcdma signal, par = 7.5 db, bw = 3.84 mhz 2110 acpl 2140 acpl 2170 acpl 2110 acpu 2140 acpu 2170 acpu 2110 eff 2140 eff 2170 eff ptfc210202fc_g3 10 20 30 40 50 60 - 60 - 50 - 40 - 30 - 20 - 10 28 32 36 40 44 drain efficiency(%) acp up & low (dbc) average output power (dbm) single - carrier wcdma drive - up v dd = 28 v, i dq = 170 ma, ? = 2170 mhz, 3gpp wcdma signal, par = 7.5 db, bw = 3.84 mhz efficiency acp up acp low ptfc210202fc_g2 - 25 - 20 - 15 - 10 - 5 - 45 - 40 - 35 - 30 - 25 1950 2000 2050 2100 2150 2200 2250 2300 return loss (db) acp up (dbc) frequency (mhz) single - carrier wcdma broadband performance v dd = 28 v, i dq = 170 ma, p out = 36dbm, 3gpp wcdma signal, par = 7.5 db return loss acp up ptfc210202fc_g5 15 20 25 30 35 40 18 19 20 21 22 23 1950 2000 2050 2100 2150 2200 2250 2300 drain efficiency (%) gain (db) frequency (mhz) single - carrier wcdma broadband performance v dd = 28 v, i dq = 170 ma, p out = 36dbm, 3gpp wcdma signal, par = 7.5 db efficiency gain ptfc210202fc_g4
data sheet 4 of 9 rev. 03.4, 2016-06-22 ptfc210202fc typical performance (cont.) - 30 - 25 - 20 - 15 - 10 - 5 0 10 12 14 16 18 20 22 1790 1890 1990 2090 2190 2290 2390 input return loss (db) gain (db) frequency (mhz) small signal cw gain & input return loss, single side v dd = 28 v, i dq = 170 ma irl gain ptfc210202fc_g8 20 25 30 35 40 45 50 55 60 65 8 10 12 14 16 18 20 22 24 26 32 34 36 38 40 42 44 46 48 efficiency (%) gain (db) output power (dbm) cw performance at various v dd i dq = 170 ma, ? = 2170 mhz v dd = 24 v v dd = 28 v v dd = 32 v gain efficiency ptfc210202fc_g7 20 25 30 35 40 45 50 55 60 65 8 10 12 14 16 18 20 22 24 26 34 36 38 40 42 44 46 efficiency (%) gain (db) output power (dbm) cw performance v dd = 28 v, i dq = 170ma efficiency gain 2110 mhz 2140 mhz 2170 mhz ptfc210202fc_g6
ptfc210202fc data sheet 5 of 9 rev. 03.4, 2016-06-22 each side load pull performance C cw signal; v dd = 28 v, 85 ma p 1db max output power max pae freq [mhz] zs [ w] zl [w] gain [db] p out [dbm] p out [w] pae [%] zl [w] gain [db] p out [dbm] p out [w] pae [%] 2110 15.9 C j19.7 6.7 C j5.6 21.7 42.67 18.5 58.7 5.3 C j2.3 23.7 41.25 13.3 67.8 2140 15.7 C j18.8 7.6 C j4.9 22.3 42.16 16.4 60.5 4.9 C j2.3 24.1 40.89 12.3 67.3 2170 17.1 C j17.7 7.0 C j5.7 22.1 42.08 16.2 59.2 4.8 C j2.9 23.9 40.87 12.2 66.6 load pull performance broadband circuit impedance frequency z source w z load w mhz r jx r jx 2110 4.86 C0.01 3.59 C2.65 2120 4.89 C0.01 3.63 C2.65 2130 4.92 C0.01 3.68 C2.66 2140 4.95 C0.01 3.72 C2.68 2150 4.98 C0.02 3.76 C2.69 2160 5.00 C0.02 3.81 C2.71 2170 5.03 C0.03 3.85 C2.73 z source z load g 1 d 1 g 2 s d 2
data sheet 6 of 9 rev. 03.4, 2016-06-22 ptfc210202fc reference circuit reference circuit assembly diagram (not to scale) ptfc210202fc_in_02 ptfc210202fc_out_02 ro4350, . 020 ( 62 ) ro4350, . 020 (61) rf_in c101 v dd rf_out c107 c104 c102 c106 r 101 r 102 c 108 c103 c105 r 201 c203 c 202 c209 c210 c201 c207 c 206 c208 c204 c205 v dd v gs v gs c 2 1 0 2 0 2 f c _ c d _ 0 3 - 0 8 - 2 0 1 3
ptfc210202fc data sheet 7 of 9 rev. 03.4, 2016-06-22 reference circuit (cont.) reference circuit assembly dut ptfc210202fc test fixture part no. ltn/ptfc210202fc pcb rogers 4350, 0.508 mm [0.020] thick, 2 oz. copper, r = 3.66 find gerber fles for this test fxture on the infneon web site at http://www.infneon.com/rfpower components information component description suggested manufacturer p/n input c101, c108 capacitor, 10 f tdk corporation c5750x5r1h106k230ka c102, c103 chip capacitor, 20 pf atc atc100a200jw150xb c104, c107 chip capacitor, 5.1 pf atc atc100a5r1cw250xt c105, c106 chip capacitor, 10 f taiyo yuden umk325c7106mm-t r101, r102 resistor, 10 w panasonic electronic components erj-8geyj100v output c201, c205 chip capacitor, 20 pf atc atc100a200jw250xt c202, c203, c206, c207 chip capacitor, 1.6 pf atc atc800a1r6bt250xt c204, c210 chip capacitor, 10 f taiyo yuden umk325c7106mm-t c208, c09 capacitor, 100 f panasonic electronic components eca-1hhg101 r201 resistor, 10 w atc cr11206t0100j pinout diagram (top view) lead connections for ptfc210202fc h - 37248 - 4 _pd _10 - 10 - 2012 s d1 d2 g1 g2 pin description d1 drain device 1 d2 drain device 2 g1 gate device 1 g2 gate device 2 s source (fange)
data sheet 8 of 9 rev. 03.4, 2016-06-22 ptfc210202fc package outline specifcations package h-37248-4 find the latest and most complete information about products and packaging at the infneon internet page http://www.infneon.com/rfpower diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d1, d2 C drains; g1, g2 C gates; s C source. 5. lead thickness: 0.10 + 0.076/C0.025 mm [0.004+0.003/C0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. c l l c c l 2x 12 . 70 [. 500 ] 19. 810 . 20 [. 780 0 . 008 ] 4x 3.81 [. 150 ] lid 9. 40 [. 370 ] flange 9. 78 [. 385 ] 2 x 4.830 . 51 [. 190 0 . 020 ] 3. 76 0.25 [. 148 0.010 ] sph 1. 57 [. 062 ] 4x r0. 76 +0 . 13 - 0. 38 [ r . 030 +0.005 - 0 . 015 ] d1 d 2 g 1 g2 1. 02 [. 040 ] 20 . 57 [. 810 ] s 2x 45 x 2.72 [45 x . 107 ] (8.89 [. 350 ]) ( 5. 08 [. 200 ]) 19. 430.51 [. 765 0.020 ] h - 37248 - 4 _po _02 _01 - 09 - 2013 0 . 0 381 [. 0015] - a -
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